Challenges and Benefits of Standardising Early Warning Systems: A Case Study of New Zealand’s Volcanic Alert Level System

Volcano early warning systems are used globally to communicate volcano-related information to diverse stakeholders ranging from specific user groups to the general public, or both. Within the framework of a volcano early warning system, Volcano Alert Level (VAL) systems are commonly used as a simple communication tool to inform society about the status of activity at a specific volcano. Establishing a VAL system that is effective for multiple volcanoes can be challenging, given that each volcano has specific behavioural characteristics. New Zealand has a wide range of volcano types and geological settings, including rhyolitic calderas capable of very large eruptions (>500 km3) and frequent unrest episodes, explosive andesitic stratovolcanoes, and effusive basaltic eruptions at both caldera and volcanic field settings. There is also a range in eruption frequency, requiring the VAL system to be used for both frequently active ‘open-vent’ volcanoes, and reawakening ‘closed-vent’ volcanoes. Furthermore, New Zealand’s volcanoes are situated in a variety of risk settings ranging from the Auckland Volcanic Field, which lies beneath a city of 1.4 million people; to Mt. Ruapehu, the location of popular ski fields that are occasionally impacted by ballistics and lahars, and produces tephra that falls in distant cities. These wide-ranging characteristics and their impact on society provide opportunities to learn from New Zealand’s experience with VAL systems, and the adoption of a standardised single VAL system for all of New Zealand’s volcanoes following a review in 2014. This chapter outlines the results of qualitative research conducted in 2010–2014 with key stakeholders and scientists, including from the volcano observatory at GNS Science, to ensure that the resulting standardised VAL system is an effective communication tool. A number of difficulties were faced in revising the VAL system so that it remains effective for all of the volcanic settings that exist in New Zealand. If warning products are standardised too much, end-user decision making and action can be limited when unusual situations occur, e.g., there may be loss of specific relevance in the alert message. Specific decision-making should be based on more specific parameters than the VAL alone, however wider VAL system standardisation can increase credibility, a known requirement for effective warning, by ensuring that warning sources are clear, trusted and widely understood. With a credible source, user groups are less likely to look for alternatives or confirmation, leading to faster action. Here we consider volcanic warnings within the wider concept of end-to-end multi-hazard early warning systems including detection, evaluation, notification, decision-making and action elements (based on Carsell et al. 2004)

Vacuum ultraviolet photochemical selectivearea atomic layer deposition of Al2O3 dielectrics

We report the photochemical atomic layer deposition of Al2O3 thin films and the use of this process to achieve area-selective film deposition. A shuttered vacuum ultraviolet (VUV) light source is used to excite molecular oxygen and trimethyl aluminum to deposit films at 60 degrees C. In-situ QCM and post-deposition ellipsometric measurements both show that the deposition rate is saturative as a function of irradiation time. Selective area deposition was achieved by projecting the VUV light through a metalized magnesium fluoride photolithographic mask and the selectivity of deposition on the illuminated and masked regions of the substrate is a logarithmic function of the UV exposure time. The Al2O3 films exhibit dielectric constants of 8 - 10 at 1 MHz after forming gas annealing, similar to films deposited by conventional thermal ALD. (C) 2015 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution 3.0 Unported License

Al-, Ga-, and In-doped ZnO thin films via aerosol assisted CVD for use as transparent conducting oxides

Al-, Ga-, and In-doped ZnO thin films were deposited on glass substrates by aerosol assisted chemical vapour deposition (AACVD) at a deposition temperature of 450 °C. The air-stable compound zinc acetylacetonate [Zn(acac)2] was used as a Zn source, whilst for the dopants of Al, Ga and In, the corresponding trichloride was used. Methanol solutions of the metal salts were used as precursor solutions and N2 carrier gas was used for the aerosol. Films were grown in approximately 30 min and were synthesised using dopant values of 5, 10, 15 and 20 mol.% (with respect to the Zn) in the precursor solution. XRD analysis showed that the films were wurtzite ZnO. XPS analysis confirmed the presence of the dopants in the films. Several of the films showed high transparency (>80%) in the visible range, and low resistivity (∼10−3 Ω cm)

Scaling aerosol assisted chemical vapour deposition: Exploring the relationship between growth rate and film properties

Thin films of fluorine doped tin oxide were deposited, by an aerosol assisted chemical vapour deposition route, to study the effect of scaling the growth rate. The effect of precursor concentration on the growth rate of the films and the properties of deposited films were compared. The films were characterised by X-ray diffraction, scanning electron microscopy, UV/vis spectroscopy, X-ray photoelectron spectroscopy and Hall effect measurements. A maximum film growth rate of ca. 100 nm min− 1 was observed, which is significantly faster than previously reported aerosol assisted studies. This method shows the ability of aerosol assisted methods to deliver high growth rates whilst maintaining the ease of doping and control over stoichiometry

Microwave-Assisted Synthesis and Processing of Al-Doped, Ga-Doped, and Al, Ga Codoped ZnO for the Pursuit of Optimal Conductivity for Transparent Conducting Film Fabrication

This work reports the microwave-assisted fabrication of highly conducting Al-doped ZnO (AZO), Ga-doped ZnO (GZO), and Al, Ga codoped ZnO (AGZO) materials as cheaper earth abundant alternatives to indium tin oxide (ITO) for transparent conducting applications. All three doped ZnO powder samples were compressed into pellets, and their electrical properties were evaluated after the postsynthesis heat treatment. The heat treatment was performed by sintering the pellets at 600 °C in a reducing atmosphere using either conventional radiant annealing for 3 h or microwave annealing for 90 s. The Al and Ga dopant levels were systematically varied from 0.5 to 2.5 at. %, and it was found that the lowest resistivity values for the pelleted singly doped ZnO powders exist when the doping level is adjusted to 1.5 at. % for both AZO and GZO, giving resistivity values of 4.4 × 10–3 and 4.3 × 10–3 Ω·cm, respectively. The lowest resistivity of 5.6 × 10–4 Ω·cm was achieved for the pelleted codoped AGZO powder using the optimized Al and Ga dopant levels. Notably, this value is one magnitude lower than the best literature reported value for conventionally synthesized codoped AGZO powder. The resistivity values obtained for the pellets after radiant and microwave postsynthesis heat treatment are comparable, although the microwave heat treatment was performed only for 90 s, compared to 3 h for conventional radiant heat treatment. Hence, significant gains were made in the postannealing step by reducing time, cost, and energy required, benefiting our thrust for finding sustainable routes toward alternative low-cost transparent conducting oxides. As a proof of concept, transparent conducting thin films were fabricated via a simple aerosol-assisted deposition technique using our best conducting AGZO nanoparticles. The films exhibited a visible transmittance as good as 90% and a resistivity of 5.7 × 10–3 Ω·cm, which can compete with the existing high cost ITO films

The Effect of Solvent on Al-doped ZnO Thin Films Deposited via Aerosol Assisted CVD

Aluminium-doped zinc oxide (AZO) thin films were deposited via aerosol assisted chemical vapour deposition (AACVD) from zinc acetylacetonate and aluminium chloride at 450 °C. The precursor solutions consisted of methanol in a mixture with one other secondary solvent, including toluene, tetrahydrofuran, n-hexane, cyclohexane, and ethyl acetate. The crystal structures, elemental compositions and surface morphologies of the resulting AZO films were determined, as well as the optoelectronic properties. It was found that the more polar solvents enhanced growth in the (002) plane of the wurtzite crystal structure, and that solutions with low viscosities resulted in superior grain growth. The film deposited from a solution consisting of methanol and ethyl acetate displayed the lowest visible transmittance, due to carbon contamination. However, it also exhibited 60% lower resistivity, in comparison to the film deposited using methanol only. This suggests that optoelectronic properties can be tuned for specific photovoltaic devices

The NHS visitor and migrant cost recovery programme - a threat to health?

BACKGROUND: In April 2014 the UK government launched the 'NHS Visitor and Migrant Cost Recovery Programme Implementation Plan' which set out a series of policy changes to recoup costs from 'chargeable' (largely non-UK born) patients. In England, approximately 75% of tuberculosis (TB) cases occur in people born abroad. Delays in TB treatment increase risk of morbidity, mortality and transmission in the community. We investigated whether diagnostic delay has increased since the Cost Recovery Programme (CRP) was introduced. METHODS: There were 3342 adult TB cases notified on the London TB Register across Barts Health NHS Trust between 1st January 2011 and 31st December 2016. Cases with missing relevant information were excluded. The median time between symptom onset and treatment initiation before and after the CRP was calculated according to birthplace and compared using the Mann Whitney test. Delayed diagnosis was considered greater or equal to median time to treatment for all patients (79 days). Univariable logistic regression was used to manually select exposure variables for inclusion in a multivariable model to test the association between diagnostic delay and the implementation of the CRP. RESULTS: We included 2237 TB cases. Among non-UK born patients, median time-to-treatment increased from 69 days to 89 days following introduction of CRP (p < 0.001). Median time-to-treatment also increased for the UK-born population from 75.5 days to 89.5 days (p = 0.307). The multivariable logistic regression model showed non-UK born patients were more likely to have a delay in diagnosis after the CRP (adjOR 1.37, 95% CI 1.13-1.66, p value 0.001). CONCLUSION: Since the introduction of the CRP there has been a significant delay for TB treatment among non-UK born patients. Further research exploring the effect of policies restricting access to healthcare for migrants is urgently needed if we wish to eliminate TB nationally

A combination of amino acids and caffeine enhances sprint running capacity in a hot, hypoxic environment

Heat and hypoxia exacerbate central nervous system (CNS) fatigue. We therefore investigated whether essential amino acid (EAA) and caffeine ingestion attenuates CNS fatigue in a simulated team sport–specific running protocol in a hot, hypoxic environment. Subelite male team sport athletes (n = 8) performed a repeat sprint running protocol on a nonmotorized treadmill in an extreme environment on 4 separate occasions. Participants ingested one of four supplements: a double placebo, 3 mg.kg⁻¹ body mass of caffeine + placebo, 2 × 7 g EAA (Musashi Create)+placebo, or caffeine + EAA before each exercise session using a randomized, double-blind crossover design. Electromyography (EMG) activity and quadriceps evoked responses to magnetic stimulation were assessed from the dominant leg at preexercise, halftime, and postexercise. Central activation ratio (CAR) was used to quantify completeness of quadriceps activation. Oxygenation of the prefrontal cortex was measured via near-infrared spectroscopy. Mean sprint work was higher (M = 174 J, 95% CI [23, 324], p < .05, d = 0.30; effect size, likely beneficial) in the caffeine + EAA condition versus EAAs alone. The decline in EMG activity was less (M = 13%, 95% CI [0, 26]; p < .01, d = 0.58, likely beneficial) in caffeine + EAA versus EAA alone. Similarly, the pre- to postexercise decrement in CAR was significantly less (M = −2.7%, 95% CI [0.4, 5.4]; p < .05, d = 0.50, likely beneficial) when caffeine + EAA were ingested compared with placebo. Cerebral oxygenation was lower (M = −5.6%, 95% CI [1.0, 10.1]; p < .01, d = 0.60, very likely beneficial) in the caffeine + EAA condition compared with LNAA alone. Coingestion of caffeine and EAA appears to maintain muscle activation and central drive, with a small improvement in running performance.13 page(s

Transparent conducting oxide thin films of Si-doped ZnO prepared by aerosol assisted CVD

For the first time, aerosol assisted chemical vapour deposition (AACVD) was used to deposit Si-doped ZnO thin films on glass. Depositions were done at a temperature of 450 °C. The precursor solution was made by dissolving the air-stable compounds zinc acetylacetonate and tetraethyl orthosilicate in methanol with a small addition of acetic acid to aid solubility. The dopant concentration in the precursor solution was optimised to find the best optoelectronic properties. The incorporation of Si into the ZnO lattice was confirmed by unit cell volumes calculated from X-ray diffraction (XRD) data and by X-ray photoelectron spectroscopy (XPS). The films consisted of pure phase wurtzite ZnO, with preferred orientation in the (002) plane. Scanning electron microscopy (SEM) was used to examine the surface morphology of the films. The optical properties of the films were analysed using UV/vis spectroscopy and indicated that the average transmittance in the visible part of the spectrum (400-700 nm) varied between 72% and 80%. The electrical properties of the films were obtained from Hall effect measurements using the van der Pauw method. The incorporation of Si into the films resulted in a decrease in resistivity down to a minimum value of 2.0 × 10−2 Ω cm for the film deposited from a 4 mol% Si : Zn ratio in the precursor solution. This conductive film was a significant improvement over the non-conductive undoped ZnO film

Phosphorus doped SnO2 thin films for transparent conducting oxide applications: synthesis, optoelectronic properties and computational models

Phosphorus doped tin(iv) oxide (P:SnO2) films have been synthesised by an aerosol assisted chemical vapour deposition route. Triethyl phosphate was used as the phosphorus dopant source. The phosphorus concentration in solution was found to be key to electrical properties, with concentrations between 0.25-0.5 mol% phosphorus giving the lowest resistivities of the deposited films. The conductivity of the films synthesised improved on doping SnO2 with phosphorus, with resistivity values of 7.27 × 10-4 Ω cm and sheet resistance values of 18.2 Ω □-1 achieved for the most conductive films. Phosphorus doping up to 1.0 mol% was shown to improve visible light transmission of the deposited films. The phosphorus doping also had a significant effect on film morphology, with varying microstructures achieved. The films were characterised by X-ray diffraction, scanning electron microscopy, UV/vis spectroscopy, Hall effect measurements and X-ray photoelectron spectroscopy. The data generated was used to build computational models of phosphorus as a dopant for SnO2, showing that the phosphorus acts as a shallow one-electron n-type donor allowing for good conductivities. Phosphorus does not suffer from self-compensation issues associated with other dopants, such as fluorine